MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz ■ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

文件：144.5 Kbytes 页数：5 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

Toshiba

东芝

Avionics LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

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PHI

PHI

10.7-11.7GHz, 2W Internally Matched Power FET

10.7-11.7GHz, 2W Internally Matched Power FET • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 30 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

文件：46.76 Kbytes 页数：1 Pages

EXCELICS

2W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

文件：81.77 Kbytes 页数：12 Pages

NEC

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