MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz ■ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

文件：144.5 Kbytes 页数：5 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

Toshiba

东芝

Avionics LDMOS transistor

DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 2-lead flangeless package (SOT538A) with a ceramic cap. The common source is connected to the mounting base. FEATURES • High power gain • Easy power control • Excellent ruggedness • Source on mounting b

文件：73.44 Kbytes 页数：9 Pages

PHI

飞利浦

10.7-11.7GHz, 2W Internally Matched Power FET

10.7-11.7GHz, 2W Internally Matched Power FET • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 30 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 9.5/8.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

文件：46.76 Kbytes 页数：1 Pages

Excelics