MICROWAVE POWER GaAs FET

FEATURES HIGH POWER P1dB=37.5dBm at 14.0GHz to 14.5GHz HIGH GAIN G1dB=6.0dB at 14.0GHz to 14.5GHz „BROAD BAND INTERNALLY MATCHED FET „HERMETICALLY SEALED PACKAGE

文件：196.24 Kbytes 页数：4 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

Toshiba

东芝

N-CHANNEL GaAs MESFET

5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To

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RENESAS

瑞萨

TO-59

TOSHIBA

东芝

上传：深圳市赛芯源科技有限公司

SOP8

AT

上传：深圳市三德芯源科技有限公司