MICROWAVE POWER GaAs FET

FEATURES ■ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 28.0dBm Single Carrier Level ■ HIGH POWER P1dB=39.5 dBm at 14.0 GHz to 14.5 GHz ■ HIGH GAIN G1dB=5.0 dB at 14.0 GHz to 14.5 GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

文件：184.3 Kbytes 页数：4 Pages

TOSHIBA

东芝

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes 页数：60 Pages

ABBATRON

14.0-14.5GHz, 8W Internally Matched Power FET

文件：46.51 Kbytes 页数：1 Pages

EXCELICS

14.0-14.5 GHz 8-Watt Internally Matched Power FET

文件：85.58 Kbytes 页数：1 Pages

EXCELICS