MICROWAVE POWER GaAs FET

文件：73.05 Kbytes 页数：4 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

Toshiba

东芝

C-Band Internally Matched FET

DESCRIPTION The FLM3742-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • High Output Power

文件：257.06 Kbytes 页数：4 Pages

EUDYNA

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

文件：240.12 Kbytes 页数：6 Pages

NEC

瑞萨

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

文件：240.12 Kbytes 页数：6 Pages

NEC

瑞萨