MICROWAVE POWER GaAs FET

文件：183.57 Kbytes 页数：4 Pages

TOSHIBA

东芝

HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz

文件：144.76 Kbytes 页数：4 Pages

TOSHIBA

东芝

HIGH POWER P1dB=36.5dBm at 3.7GHz to 4.2GHz

Toshiba

东芝

C-Band Internally Matched FET

文件：256.19 Kbytes 页数：4 Pages

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C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

文件：240.12 Kbytes 页数：6 Pages

NEC

瑞萨

C-BAND POWER GAAS MESFET

DESCRIPTION The NEZ C-Band series of high performance microwave power GaAs MESFETs provides high gain and low intermodulation distortion over standard and digital communication bands from 3 to 8 GHz. FEATURES ● INTERNALLY MATCHED (IN/OUT) ● HIGH Pout (4 W, 8 W, & 15W) ● CLASS A OPERATION

文件：240.12 Kbytes 页数：6 Pages

NEC

瑞萨