MICROWAVE POWER GaAs FET

文件：353.2 Kbytes 页数：4 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

Toshiba

东芝

Space saving design for high density packaging

文件：493.41 Kbytes 页数：1 Pages

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14.40-15.35GHz 2W Internally Matched Power FET

14.40-15.35GHz, 2W Internally Matched Power FET • 14.40-15.35GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 27 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.0/+32.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EI

文件：90.06 Kbytes 页数：1 Pages

EXCELICS

14.40-15.35GHz 2-Watt Internally-Matched Power FET

文件：123.51 Kbytes 页数：2 Pages

EXCELICS