MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz ■ HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

文件：88.73 Kbytes 页数：2 Pages

TOSHIBA

东芝

Microwave Power GaAs FET - TIM1414-4LA - Toshiba

FEATURES\n■ HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz\n■ HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz\n■ BROAD BAND INTERNALLY MATCHED\n■ HERMETICALLY SEALED PACKAGE ■ HIGH POWERT P1dB=36.5dBm at 14.0GHz to 14.5GHz\n■ HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz\n■ BROAD BAND INTERNALLY MATCHED\n■ HERMETICALLY SEALED PACKAGE;

Toshiba

东芝

Premier Supplier of Electronic Hardware

文件：5.0379 Mbytes 页数：60 Pages

ABBATRON

14.0-14.5GHz, 4W Internally Matched Power FET

14.0-14.5GHz, 4W Internally Matched Power FET • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 27 TYPICAL) • EIB FEATURES HIGH IP3(49dBm TYPICAL) • +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

文件：47.24 Kbytes 页数：1 Pages

EXCELICS

14.0-14.5GHz, 4W Internally Matched Power FET

14.0-14.5GHz, 4W Internally Matched Power FET • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 27 TYPICAL) • EIB FEATURES HIGH IP3(49dBm TYPICAL) • +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 8.5/7.5dB TYPICAL G1dB POWER GAIN FOR EIA/EI

文件：47.24 Kbytes 页数：1 Pages

EXCELICS