MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=33.5dBm at 14.0GHz to 14.5GHz ■ HIGH GAIN G1dB=6.5dB at 14.0GHz to 14.5GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

文件：163.68 Kbytes 页数：4 Pages

TOSHIBA

东芝

MICROWAVE POWER MMIC AMPLIFIER

FEATURES ■ HIGH POWER P1dB=34.5dBm at 13.75GHz to 14.5GHz ■ HIGH GAIN G1dB=26.0dB at 13.75GHz to 14.5GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

文件：43.86 Kbytes 页数：2 Pages

TOSHIBA

东芝

14.0-14.5GHz, 2W Internally Matched Power FET

14.0-14.5GHz, 2W Internally Matched Power FET • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 30 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EI

文件：47.27 Kbytes 页数：1 Pages

EXCELICS

14.0-14.5GHz, 2W Internally Matched Power FET

14.0-14.5GHz, 2W Internally Matched Power FET • 14.0-14.5GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 30 TYPICAL) • EIB FEATURES HIGH IP3(46dBm TYPICAL) • +33.5/+33.0dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 9.0/8.0dB TYPICAL G1dB POWER GAIN FOR EIA/EI

文件：47.27 Kbytes 页数：1 Pages

EXCELICS

14.00-14.50GHz 2-Watt Internally-Matched Power FET

文件：123.26 Kbytes 页数：2 Pages

EXCELICS