MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 36.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.5dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 24.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE

文件：281.16 Kbytes 页数：2 Pages

TOSHIBA

东芝

10.7-11.7GHz, 4W Internally Matched Power FET

10.7-11.7GHz, 4W Internally Matched Power FET • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 30 TYPICAL) • EIB FEATURES HIGH IP3(49dBm TYPICAL) • +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB •

文件：46.9 Kbytes 页数：1 Pages

EXCELICS

10.7-11.7GHz, 4W Internally Matched Power FET

10.7-11.7GHz, 4W Internally Matched Power FET • 10.7-11.7GHz BANDWIDTH AND INPUT/OUTPUT IMPEDANCE MATCHED TO 50 OHM • EIA FEATURES HIGH PAE( 30 TYPICAL) • EIB FEATURES HIGH IP3(49dBm TYPICAL) • +36.5/+35.5dBm TYPICAL P1dB OUTPUT POWER FOR EIA/EIB • 9/8dB TYPICAL G1dB POWER GAIN FOR EIA/EIB •

文件：46.9 Kbytes 页数：1 Pages

EXCELICS

10.70-11.70GHz 4-Watt Internally-Matched Power FET

FEATURES • 10.70 –11.70GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +36.0 dBm Output Power at 1dB Compression • 6.5 dB Power Gain at 1dB Compression • 30 Power Added Efficiency • -46 dBc IM3 at Po = 25.5 dBm SCL • 100 Tested for DC, RF, and RTH

文件：162.37 Kbytes 页数：4 Pages

EXCELICS