MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=37.5dBm at 10.7GHz to 11.7GHz ■ HIGH GAIN G1dB=7.0dB at 10.7GHz to 11.7GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

文件：137.81 Kbytes 页数：5 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

Toshiba

东芝

N-CHANNEL GaAs MESFET

5W X, Ku-BAND POWER GaAs MESFET DESCRIPTION The NEZ1011-5E and NEZ1414-5E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To

文件：198.82 Kbytes 页数：14 Pages

RENESAS

瑞萨

TOSHIBA
TO-59

TOSHIBA

东芝

上传：深圳市赛芯源科技有限公司

AT
SOP8

AT

上传：深圳市三德芯源科技有限公司