MICROWAVE POWER GaAs FET

The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under

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TOSHIBA

东芝

MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.0dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE

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TOSHIBA

东芝

10.70-11.70GHz 8-Watt Internally Matched Power FET

FEATURES • 10.70–11.70GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39.0 dBm Output Power at 1dB Compression • 6.0 dB Power Gain at 1dB Compression • 30 Power Added Efficiency • -46 dBc IM3 at PO = 28.5 dBm SCL • 100 Tested for DC, RF, and RTH

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Excelics

X, Ku-Band Internally Matched FET

DESCRIPTION The FLM1011-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • High Output Power

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EUDYNA

GaAs MES FET

DESCRIPTION The NEZ1011-8E is power GaAs FET which provides high gain, high efficiency and high output power in Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit. To reduce thermal resistance, the device has a PHS

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RENESAS

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