MICROWAVE POWER GaAs FET

FEATURES ■ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 29.0dBm ■ HIGH POWER P1dB=40.5dBm at 14.0GHz to 14.5GHz ■ HIGH GAIN G1dB=6.0 dB at 14.0 GHz to 14.5GHz ■ BROAD BAND INTERNALLY MATCHED FET ■ HERMETICALLY SEALED PACKAGE

文件：180.06 Kbytes 页数：4 Pages

TOSHIBA

东芝

HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz

FEATURES HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz HIGH GAIN G1dB=5.5dB at 13.75GHz to 14.5GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE

文件：187.16 Kbytes 页数：4 Pages

TOSHIBA

东芝

MICROWAVE POWER GaAs FET

Toshiba

东芝

HIGH POWER P1dB=39.5dBm at 13.75GHz to 14.5GHz

Toshiba

东芝