MICROWAVE POWER GaAs FET

FEATURES ･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER P1dB= 39.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN G1dB= 9.0dB at 10.7GHz to 11.7GHz ･LOW INTERMODULATION DISTOTION IM3=-45dBc at Pout= 27.0dBm Single Carrier Level ･HERMETICALLY SEALED PACKAGE

文件：281.57 Kbytes 页数：2 Pages

TOSHIBA

东芝

10.70-11.70GHz 8-Watt Internally Matched Power FET

FEATURES • 10.70–11.70GHz Bandwidth • Input/Output Impedance Matched to 50 Ohms • +39.0 dBm Output Power at 1dB Compression • 6.0 dB Power Gain at 1dB Compression • 30 Power Added Efficiency • -46 dBc IM3 at PO = 28.5 dBm SCL • 100 Tested for DC, RF, and RTH

文件：123.67 Kbytes 页数：2 Pages

EXCELICS

X, Ku-Band Internally Matched FET

DESCRIPTION The FLM1011-8F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 ohm system. Eudyna’s stringent Quality Assurance Program assures the highest reliability and consistent performance. FEATURES • High Output Power

文件：262.41 Kbytes 页数：4 Pages

EUDYNA

8W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-8E and NEZ1414-8E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

文件：82.69 Kbytes 页数：12 Pages

NEC

瑞萨