TIM1011-8UL

MICROWAVE POWER GaAs FET

FEATURES ･BROADBANDINTERNALLYMATCHEDFET ･HIGHPOWER P1dB=39.5dBmat10.7GHzto11.7GHz ･HIGHGAIN G1dB=9.0dBat10.7GHzto11.7GHz ･LOWINTERMODULATIONDISTOTION IM3=-45dBcatPout=27.0dBm SingleCarrierLevel ･HERMETICALLYSEALEDPACKAGE

EIC1011-8

10.70-11.70GHz8-WattInternallyMatchedPowerFET

FEATURES •10.70–11.70GHzBandwidth •Input/OutputImpedanceMatchedto50Ohms •+39.0dBmOutputPowerat1dBCompression •6.0dBPowerGainat1dBCompression •30PowerAddedEfficiency •-46dBcIM3atPO=28.5dBmSCL •100TestedforDC,RF,andRTH

FLM1011-8F

X,Ku-BandInternallyMatchedFET

DESCRIPTION TheFLM1011-8FisapowerGaAsFETthatisinternallymatchedforstandardcommunicationbandstoprovideoptimumpowerandgainina50ohmsystem. Eudyna’sstringentQualityAssuranceProgramassuresthehighestreliabilityandconsistentperformance. FEATURES •HighOutputPower

NEZ1011-8E

8WX,Ku-BANDPOWERGaAsMESFET

DESCRIPTION TheNEZ1011-8EandNEZ1414-8EarepowerGaAsMESFETswhichprovidehighgain,highefficiencyandhighoutputinX,Ku-band.Theinternalinputandoutputmatchingenablesguaranteedperformancetobeachievedwithonlya50Ωexternalcircuit.Toreducethermalresistancethedevic

NEZ1011-8E

GaAsMESFET

DESCRIPTION TheNEZ1011-8EispowerGaAsFETwhichprovideshigh gain,highefficiencyandhighoutputpowerinKu-band. Theinternalinputandoutputmatchingenablesguaranteed performancetobeachievedwithonlya50Wexternal circuit. Toreducethermalresistance,thedevicehasaPHS

TIM1011-8L

MICROWAVEPOWERGaAsFET

Theinformationcontainedhereinispresentedonlyasaguidefortheapplicationsofourproducts.NoresponsibilityisassumedbyTOSHIBAforanyinfringementsofpatentsorotherrightsofthethirdpartieswhichmayresultsfromitsuse,Nolicenseisgrantedbyimplicationorotherwiseunder