2W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION The NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the devic

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NEC

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GaAs MES FET

2 W X-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ1011-2E is power GaAs FET which provides high gain, high efficiency and high output power in Xband. The internal input and output matching enables guaranteed performance to be achieved with only a 50 W external circuit.

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RENESAS

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2W X, Ku-BAND POWER GaAs MESFET

DESCRIPTION\nThe NEZ1011-2E and NEZ1414-2E are power GaAs MESFETs which provide high gain, high efficiency and high output in X, Ku-band. The internal input and output matching enables guaranteed performance to be achieved with only a 50 Ω external circuit. To reduce thermal resistance the device ha • High Output Power : Po (1 dB) = +34.0 dBm typ.\n• High Linear Gain : 8.5 dB typ. (NEZ1011-2E), 7.5 dB typ. (NEZ1414-2E)\n• High Efficiency : 30 % typ.\n• Input and Output Internally Matched for Optimum performance ;

Renesas

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MICROWAVE POWER GaAs FET

FEATURES ■ HIGH POWER P1dB=33.5dBm at 10.7GHz to 11.7GHz ■ HIGH GAIN G1dB=7.5dB at 10.7GHz to 11.7GHz ■ BROAD BAND INTERNALLY MATCHED ■ HERMETICALLY SEALED PACKAGE

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TOSHIBA

东芝