丝印：SVD1055SA；Package：SOP-8-225-1.27；17A, 55V N/P-CHANNEL MOSFET

GENERAL DESCRIPTION SVD1055SA is a combination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state res

文件：338.37 Kbytes 页数：9 Pages

SILAN

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丝印：SVD1055SA；Package：SOP-8-225-1.27；17A, 55V N/P-CHANNEL MOSFET

GENERAL DESCRIPTION SVD1055SA is a combination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state res

文件：338.37 Kbytes 页数：9 Pages

SILAN

士兰微

丝印：SVD1055SA；Package：SOP-8-225-1.27；17A, 55V N/P-CHANNEL MOSFET

GENERAL DESCRIPTION SVD1055SA is a combination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state res

文件：338.37 Kbytes 页数：9 Pages

SILAN

士兰微

丝印：SVD1055SA；Package：SOP-8-225-1.27；17A, 55V N/P-CHANNEL MOSFET

GENERAL DESCRIPTION SVD1055SA is a combination device packaged with an N-channel and a P-channel enhancement mode MOS FET, which is produced using Silan proprietary low-voltage planar VDMOS process. The improved process and cell structure have been especially tailored to minimize on-state res

文件：338.37 Kbytes 页数：9 Pages

SILAN

士兰微