STY16NA90

N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET

DESCRIPTION TheMax247™packageisanewhighvolumepowerpackageexibitingthesamefootprintastheindustrystandardTO-247,butdesignedtoaccomodatemuchlargersiliconchips,normallysuppliedinbiggerpackagessuchasTO-264.Theincreaseddiecapacitymakesthedeviceidealtoreducec

STY16NA90

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=16A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.54Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STY25NA60

N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET

DESCRIPTION TheMax247packageisanewhighvolumepowerpackageexibitingthesamefootprintastheindustrystandardTO-247,butdesignedtoaccomodatemuchlargersiliconchips,normallysuppliedinbiggerpackagessuchasTO-264.Theincreaseddiecapacitymakesthedeviceidealtoreducecomp

STY25NA60

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=25A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.24Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STY30NA50

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION TheMax247TMpackageisanewhighvolumepowerpackageexibitingthesamefootprintastheindustrystandardTO-247,butdesignedtoaccomodatemuchlargersiliconchips,normallysuppliedinbiggerpackagessuchasTO-264.Theincreaseddiecapacitymakesthedeviceidealtoreduce

STY30NA50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=30A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.175Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STY30NK90Z

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=28A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.26Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STY34NB50

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.13Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STY34NB50F

N - CHANNEL 500V - 0.11ohm - 34 A - Max247 PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAYprocess,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)per

STY34NB50F

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=34A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.