STY

Box Cover Units for Plug Fuses

BoxCoverUnitsForPlugFuses Plugfuseboxcoverunitsprovideasimple,inexpensivewaytoprotectsmallmotorswithEdison-type“T”,“TL”,“TC”,“P”and“W”plugfuses.Boxcoverunitsareeasilyinstalledinstandardelectricalboxes.Byusingfusessizedattheampratingofamotororslig

STY

包装：散装 类别：电路保护 保险丝座 描述：FUSE TRON BOX COVER UNIT

Eaton - Bussmann Electrical Division

STY100NS20FD

N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY??Power MOSFET

Description UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofPowerMOSFETswithoutstandingperformances.ThenewpatentedSTriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(ON)perarea,e

STY100NS20FD

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=100A@TC=25℃ ·DrainSourceVoltage-VDSS=200V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.024Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STY105NM50N

N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=110A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=22mΩ(Max)@VGS=10V APPLICATIONS ·SwitchModePowerSupply(SMPS) ·UninterruptiblePowerSupply(UPS) ·PowerFactorCorrection(PFC)

STY112N65M5

N-channel 650 V, 0.019 廓, 96 A, MDmesh??V Power MOSFET in Max247 package

Description ThisdeviceisanN-channelMDmesh™VPowerMOSFETbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatchedam

STY140NS10

N-CHANNEL 100V - 0.009 ohm - 140A MAX247??MESH OVERLAY??POWER MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STY140NS10

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=140A@TC=25℃ ·DrainSourceVoltage-VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.011Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STY15NA100

N - CHANNEL 1000V - 0.65 ohm - 15A - Max247 MOSFET

DESCRIPTION TheMax247TMpackageisanewhighvolumepowerpackageexibitingthesamefootprintastheindustrystandardTO-247,butdesignedtoaccomodatemuchlargersiliconchips,normallysuppliedinbiggerpackagessuchasTO-264.Theincreaseddiecapacitymakesthedeviceidealtoreduce

STY15NA100

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=15A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.77Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.