Box Cover Units for Plug Fuses

Box Cover Units For Plug Fuses Plug fuse box cover units provide a simple, inexpensive way to protect small motors with Edison-type “T”, “TL”, “TC”, “P” and “W” plug fuses. Box cover units are easily installed in standard electrical boxes. By using fuses sized at the amp rating of a motor or slig

文件：143.58 Kbytes 页数：2 Pages

COOPER

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=100A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.024Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：364.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY??Power MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(ON) per area, e

文件：260.209 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 110A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：389.29 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.019 廓, 96 A, MDmesh??V Power MOSFET in Max247 package

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched am

文件：856.87 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 100V - 0.009 ohm - 140A MAX247??MESH OVERLAY??POWER MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：254.28 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=140A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.011Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：365.14 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS=1000V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.77Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：364.94 Kbytes 页数：2 Pages

ISC

无锡固电

N - CHANNEL 1000V - 0.65 ohm - 15A - Max247 MOSFET

DESCRIPTION The Max247TM package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264. The increased die capacity makes the device ideal to reduce

文件：44.69 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

N - CHANNEL 900V - 0.5 ohm - 16A - Max247 EXTREMELY LOW GATE CHARGE POWER MOSFET

DESCRIPTION The Max247™ package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264. The increased die capacity makes the device ideal to reduce c

文件：47.6 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体