isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=100A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.024Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：364.93 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY??Power MOSFET

Description Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(ON) per area, e

文件：260.209 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-channel 200V - 0.022廓 - 100A - Max247 MESH OVERLAY??Power MOSFET

文件：232.19 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 200V - 0.022廓 - 100A - Max247 MESH OVERLAY??Power MOSFET

文件：232.19 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 200V - 0.022ohm - 100A Max247 MESH OVERLAY™ Power MOSFET

ST

意法半导体