isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.045Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-CHANNEL 300V - 0.033ohm - 60A Max247 Zener-Protected SuperMESH Power MOSFET

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STMICROELECTRONICS

意法半导体

N沟道300V - 0.045 Ohm - 60A Max247有齐纳管保护的SuperMESH™功率MOSFET

The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST • VERY GOOD MANUFACTURING REPEATIBILITY \n• TYPICAL RDS(on) = 0.033 Ω \n• 100% AVALANCHE TESTED \n• EXTREMELY HIGH dv/dt CAPABILITY \n• VERY LOW INTRINSIC CAPACITANCES \n• GATE CHARGE MINIMIZED;

ST

意法半导体

SMD3

ROHM

罗姆

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