N-channel 650 V, 0.019 廓, 96 A, MDmesh??V Power MOSFET in Max247 package

Description This device is an N-channel MDmesh™ V Power MOSFET based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low on-resistance, which is unmatched am

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STMICROELECTRONICS

意法半导体

N沟道650 V、0.019 Ohm典型值、96 A MDmesh M5功率MOSFET，Max247封装

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

ROHM
SMD3

ROHM

罗姆

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