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STY100NS20FD中文资料意法半导体数据手册PDF规格书
STY100NS20FD规格书详情
描述 Description
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of Power MOSFETs with outstanding performances. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(ON) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
General features
■ Extremely high dv/dt capability
■ 100 avalanche tested
■ Gate charge minimized
■ ± 20V gate to source voltage rating
■ Low intrinsic capacitance
■ Fast body-drain diode:low trr, Qrr
Applications
■ Switching application
产品属性
- 型号:
STY100NS20FD
- 功能描述:
MOSFET N-Ch 200 Volt 100 A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST/意法 |
24+ |
TO247 |
5070 |
全新原装,价格优势,原厂原包 |
询价 | ||
ST/意法半导体 |
24+ |
Max247-3 |
6000 |
全新原装深圳仓库现货有单必成 |
询价 | ||
ST/意法半导体 |
23+ |
Max247-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
24+ |
Max247-3 |
16900 |
原装,正品 |
询价 | ||
ST/意法半导体 |
23+ |
N/A |
20000 |
询价 | |||
ST |
24+ |
原厂封装 |
65250 |
支持样品,原装现货,提供技术支持! |
询价 | ||
ST/意法 |
22+ |
TO-247 |
28000 |
原装现货只有原装.假一罚十 |
询价 | ||
ST |
23+ |
TO-247 |
2530 |
原厂原装正品 |
询价 | ||
22+ |
NA |
3000 |
加我QQ或微信咨询更多详细信息, |
询价 | |||
ST/意法半导体 |
23+ |
Max247-3 |
16900 |
公司只做原装,可来电咨询 |
询价 |