N沟道650 V、0.014 Ohm典型值、130 A MDmesh M5功率MOSFET，Max247封装

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superio • Extremely low RDS(on) \n• Low gate charge and input capacitance \n• Excellent switching performance \n• 100% avalanche tested;

ST

意法半导体

N-channel 650 V, 0.014 廓 typ., 130 A, MDmesh??V Power MOSFET in Max247 package

文件：971.65 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 0.014 (ohm) typ., 130 A, MDmesh V Power MOSFET in a ISOTOP package

文件：1.02154 Mbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

ROHM
SMD3

ROHM

罗姆

上传：佛山市芯光达科技有限公司