N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 110A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 22mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply (SMPS) · Uninterruptible Power Supply (UPS) · Power Factor Correction (PFC)

文件：389.29 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：105NM50N；Package：Max247；N-channel 500 V, 0.019 廓 typ., 110 A, MDmesh??II Power MOSFET in a Max247 package

文件：907.76 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

N沟道500 V、0.018 Ohm典型值、110 A MDmesh II功率MOSFET，Max247封装

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most • Max247 worldwide best RDS(on) \n• 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体

SMD3

ROHM

罗姆

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