N - CHANNEL 200V - 0.030ohm - 60 A - Max247 FAST POWER MOS TRANSISTOR

DESCRIPTION The Max247™ package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264. The increased die capacity makes the device ideal to reduce c

文件：35.47 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.032Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：364.91 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.045Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：366.22 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=60A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：364.88 Kbytes 页数：2 Pages

ISC

无锡固电

N-CHANNEL 500V - 0.045ohm - 60A Max247 Zener-Protected MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：263.61 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.050ohm - 60A Max247 Zener-Protected MDmesh?줡ower MOSFET

DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of

文件：288.5 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

Ø6” Circular Quiet Zone, Rolled Edge Reflector For Compact Range

FEATURES Robust, Single Piece Aluminum Construction High Surface Accuracy Chem Film Treatment for Corrosion Resistance APPLICATIONS Compact Antenna Range

文件：403.81 Kbytes 页数：5 Pages

ERAVANT

Ø12” Circular Quiet Zone, Rolled Edge Reflector For Compact Range

FEATURES Robust, Single Piece Aluminum Construction High Surface Accuracy Chem Film Treatment for Corrosion Resistance APPLICATIONS Compact Antenna Range

文件：275.41 Kbytes 页数：2 Pages

ERAVANT

WR-12 Open Ended Waveguide Probe Assembly, 6.5 dBi Directivity

FEATURES Robust Universal Mounting Cage Bubble Level and Absorber Shield Right Angle Connector Configuration Linear Polarization DC Open Circuit APPLICATIONS Near Field Range Testing General System Setups

文件：349.19 Kbytes 页数：4 Pages

ERAVANT

WR-15 Open Ended Waveguide Probe Assembly, 6.5 dBi Directivity

FEATURES Robust Universal Mounting Cage Bubble Level and Absorber Shield Right Angle Connector Configuration Linear Polarization DC Open Circuit APPLICATIONS Near Field Range Testing General System Setups

文件：360.14 Kbytes 页数：4 Pages

ERAVANT