isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=25A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.24Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET

DESCRIPTION The Max247 package is a new high volume power package exibiting the same footprint as the industry standard TO-247, but designed to accomodate much larger silicon chips, normally supplied in bigger packages such as TO-264.The increased die capacity makes the device idealto reduce comp

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STMICROELECTRONICS

意法半导体

N - CHANNEL 600V - 0.225ohm - 25 A - Max247 EXSTREMELY LOW GATE CHARGE POWER MOSFET

ST

意法半导体

ROHM
SMD3

ROHM

罗姆

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