STY50N105DK5中文资料意法半导体数据手册PDF规格书

特性 Features

 Fast-recovery body diode

 Best RDS(on) x area

 Low gate charge, input capacitance and

resistance

 100 avalanche tested

 Extremely high dv/dt ruggedness

Applications

 Switching applications

描述 Description

This very high voltage N-channel Power

MOSFET is part of the MDmesh™ DK5 fast

recovery diode series. The MDmesh™ DK5

combines very low recovery charge (Qrr) and

recovery time (trr) with an excellent improvement

in RDS(on) * area and one of the most effective

switching behaviors, ideal for half bridge and full

bridge converters.