N-CHANNEL 600V - 0.5ohm - 11A - Max220 PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per a

文件：46.01 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

N-CHANNEL 600V - 0.5ohm - 11A - Max220 PowerMESH MOSFET

ST

意法半导体

TO-252

SAMHOP/三合微

上传：深圳市凯斯宇科技有限公司

TO-252

SAMSUNG/三星

上传：深圳台格电子科技有限公司

QFP

ST

上传：深圳市创博伟业科技有限公司