N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES • Super high dense cell design for low RDS(ON). • Rugged and reliable. • TO-252 and TO-251 Package.

文件：801.98 Kbytes 页数：8 Pages

Samhop

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N-Channel 30-V (D-S) MOSFET

文件：914.16 Kbytes 页数：8 Pages

VBSEMI

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N-Channel 30-V (D-S) MOSFET

文件：914.07 Kbytes 页数：8 Pages

VBSEMI

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N-channel Enhanced mode DFN3*3 MOSFET

文件：743.43 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TF20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

文件：4.38125 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体