N-Channel 30-V (D-S) MOSFET

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SEMIPOWER

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Description The TF20N03 TO-252 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

文件：4.38125 Mbytes 页数：6 Pages

TUOFENG

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文件：188.36 Kbytes 页数：4 Pages

UTC

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