N-channel 600 V, 0.28 廓 typ., 12 A MDmesh??M2 Power MOSFET in TO-220 and IPAK packages

Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high eff

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STMICROELECTRONICS

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N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in IPAK package

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters.\n • Extremely low gate charge\n• Excellent output capacitance (COSS) profile• 100% avalanche tested\n• Zener-protected;

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Extremely low gate charge

文件：453.02 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Extremely low gate charge

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STMICROELECTRONICS

意法半导体

N-Channel Power MOSFET

FEATURES ·Drain Current -ID= 12A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.32Ω(Max)@VGS= 10V APPLICATIONS ·Switching application

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无锡固电