N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, ex

文件：57.87 Kbytes 页数：6 Pages

STMICROELECTRONICS

意法半导体

N-channel 620 V, 2.5 廓 , 2.5 A SuperMESH3??Power MOSFET DPAK, TO-220FP, TO-220, IPAK

Features ■ 100 avalanche tested ■ Extremely high dv/dt capability ■ Very low intrinsic capacitance ■ Improved diode reverse recovery characteristics ■ Zener-protected Application Switching applications Description These devices are made using the SuperMESH3™ Power MOSFET technology t

文件：1.19252 Mbytes 页数：21 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.5A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.0Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.73 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：3LN80K5；Package：IPAK；N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5 Power MOSFET in TO-220 and IPAK packages

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description These very high voltage N-channel Power MOSFET are designed using MDmesh™ K5 technol

文件：804.67 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.7A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.71 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 1.4 typ., 3.5 A MDmeshTM M6 Power MOSFET in an IPAK package

Features • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100 avalanche tested • Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：464.96 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 2.8 廓 typ., 2.5 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.60007 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.5A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.54 Kbytes 页数：2 Pages

ISC

无锡固电

Dual N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：637.57 Kbytes 页数：7 Pages

SAMHOP

三合微科

Dual E nhancement Mode Field Effect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel )

文件：951.02 Kbytes 页数：11 Pages

SAMHOP

三合微科