丝印：4N80K5；Package：IPAK；N-channel 800 V, 2.1 ??typ., 3 A MDmesh??K5 Power MOSFETs in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.30035 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：791.2 Kbytes 页数：9 Pages

SAMHOP

三合微科

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.4A@ TC=25℃ ·Drain Source Voltage -VDSS=525V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.45 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.18185 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

N-channel 525 V, 1.2 ohm, 4.4 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.19927 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.38 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.2A@ TC=25℃ ·Drain Source Voltage -VDSS=620V(Min) ·Static Drain-Source On-Resistance -RDS(on) =1.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：318.16 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET

Description These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic perf

文件：1.1786 Mbytes 页数：19 Pages

STMICROELECTRONICS

意法半导体

N-channel 650 V, 1.15 typ., 4 A MDmeshTM M6 Power MOSFET in an IPAK package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

文件：688.44 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on resistance, superior dynamic performance and high avalanche capability, render

文件：1.41415 Mbytes 页数：23 Pages

STMICROELECTRONICS

意法半导体