STU5N65M6

N-channel 650 V, 1.15 typ., 4 A MDmeshTM M6 Power MOSFET in an IPAK package

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof

STD5N65M6

N-channel650V,1.15Ωtyp.,4AMDmesh™M6PowerMOSFETinaDPAKpackage

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Applications Switchingapplications Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell

STF5N65M6

N-channel650V,1.15Ωtyp.,4AMDmesh™M6PowerMOSFETinaTO-220FPpackage

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Applications Switchingapplications Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell