N-channel 650 V, 1.15 typ., 4 A MDmeshTM M6 Power MOSFET in an IPAK package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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N-channel 650 V, 1.15 Ohm typ., 4 A MDmesh M6 Power MOSFET in an IPAK package

The new MDmesh™ M6 technology incorporates the most recent advancements to the well-knownand consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previousgeneration of MDmesh devices through its new M6 technology, which combines excellentRDS(on) * area improvement with one of t • Reduced switching losses\n• Lower RDS(on) x area vs previous generation\n• Low gate input resistance• 100% avalanche tested\n• Zener-protected;

ST

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N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a DPAK package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

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N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a TO-220FP package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

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