丝印：5N65M6；Package：TO-220FP；N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a TO-220FP package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

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N-channel 650 V, 1.15 Ohm typ., 4 A MDmesh M6 Power MOSFET in a TO-220FP package

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N-channel 650 V, 1.15 typ., 4 A MDmeshTM M6 Power MOSFET in an IPAK package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of

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STMICROELECTRONICS

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N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a DPAK package

Features  Reduced switching losses  Lower RDS(on) x area vs previous generation  Low gate input resistance  100 avalanche tested  Zener-protected Applications  Switching applications Description The new MDmesh™ M6 technology incorporates the most recent advancements to the well

文件：801.56 Kbytes 页数：15 Pages

STMICROELECTRONICS

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