N-channel 600 V, 0.95 typ., 5 A MDmesh™ DM2 Power MOSFET in a TO-220FP package

Features • Fast-recovery body diode • Extremely low gate charge and input capacitance • Low on-resistance • 100 avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fastrecovery diode series.

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STMICROELECTRONICS

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N-channel 600 V, 0.95 Ohm typ., 5 A MDmesh DM2 Power MOSFET in a TO-220FP package

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shi • Fast-recovery body diode\n• Extremely low gate charge and input capacitance\n• Low on-resistance• 100% avalanche tested\n• Extremely high dv/dt ruggedness\n• Zener-protected;

ST

意法半导体

TO-220-3

ST

上传：深圳市宇集芯电子有限公司

TO-220F

ST/意法

上传：深圳庞田科技有限公司

TO-247F

ST

上传：深圳德田科技有限公司