N沟道600 V、0.55 Ohm典型值、7.5 A MDmesh M2功率MOSFET，TO-220FP宽沿面封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.\n\n Th • Extremely low gate charge \n• Excellent output capacitance (COSS) profile \n• 100% avalanche tested \n• Zener-protected \n• Wide distance of 4.25 mm between the pins;

ST

意法半导体

Extremely low gate charge

文件：1.15351 Mbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

文件：1.02603 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.63832 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10783 Mbytes 页数：10 Pages

VBSEMI

微碧半导体