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STFH10N60M2数据手册ST中文资料规格书
STFH10N60M2规格书详情
描述 Description
This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
The TO-220FP wide creepage package provides increased surface insulation for Power MOSFETs to prevent failure due to arcing, which can occur in polluted environments.
特性 Features
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
• Wide distance of 4.25 mm between the pins
技术参数
- 制造商编号
:STFH10N60M2
- 生产厂家
:ST
- Package
:TO-220FP wide creepage
- Grade
:Industrial
- VDSS(V)
:600
- RDS(on)_max(@ VGS=10V)(Ω)
:0.6
- Drain Current (Dc)_max(A)
:7.5
- PTOT_max(W)
:25
- Qg_typ(nC)
:13.5
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ST |
23+ |
TO-220FP wide creepage |
12500 |
ST系列在售,可接长单 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220FP-3 |
12700 |
买原装认准中赛美 |
询价 | ||
ST(意法) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
询价 | ||
ST/意法半导体 |
22+ |
TO-220FP-3 |
10000 |
只有原装,原装,假一罚十 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220FP-3 |
8860 |
原装现货,实单价优 |
询价 | ||
ST/意法半导体 |
24+ |
TO-220FP-3 |
16900 |
原装,正品 |
询价 | ||
ST/意法半导体 |
21+ |
TO-220FP-3 |
8860 |
只做原装,质量保证 |
询价 | ||
ST/意法半导体 |
23+ |
TO-220FP-3 |
12820 |
正规渠道,只有原装! |
询价 | ||
ST/意法半导体 |
25+ |
原厂封装 |
10280 |
原厂授权代理,专注军工、汽车、医疗、工业、新能源! |
询价 | ||
ST(意法半导体) |
24+ |
TO-220F |
7825 |
支持大陆交货,美金交易。原装现货库存。 |
询价 |