STD5N65M6

N-channel 650 V, 1.15 Ω typ., 4 A MDmesh™ M6 Power MOSFET in a DPAK package

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Applications Switchingapplications Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell

STF5N65M6

N-channel650V,1.15Ωtyp.,4AMDmesh™M6PowerMOSFETinaTO-220FPpackage

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Applications Switchingapplications Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell

STU5N65M6

N-channel650V,1.15typ.,4AMDmeshTMM6PowerMOSFETinanIPAKpackage

Features Reducedswitchinglosses LowerRDS(on)xareavspreviousgeneration Lowgateinputresistance 100avalanchetested Zener-protected Description ThenewMDmesh™M6technologyincorporates themostrecentadvancementstothewell-known andconsolidatedMDmeshfamilyof