isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=4.0A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =3.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.51 Kbytes 页数：2 Pages

ISC

无锡固电

Ultra-low gate charge

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件：1.19706 Mbytes 页数：26 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=3.5A@ TC=25℃ ·Drain Source Voltage -VDSS=950V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：317.03 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：5NK50Z；Package：IPAK；N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features • 100 avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelect

文件：674.1 Kbytes 页数：29 Pages

STMICROELECTRONICS

意法半导体

N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：856.34 Kbytes 页数：8 Pages

SAMHOP

三合微科

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

文件：28.4 Kbytes 页数：4 Pages

EIC

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

文件：28.4 Kbytes 页数：4 Pages

EIC

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

文件：28.4 Kbytes 页数：4 Pages

EIC

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

文件：28.4 Kbytes 页数：4 Pages

EIC

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free

文件：28.4 Kbytes 页数：4 Pages

EIC