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STU5N95K3

N-channel 950 V, 3 ohm typ, 4 A Zener-protected SuperMESH3

Description TheseSuperMESH3™PowerMOSFETsaretheresultofimprovementsappliedtoSTMicroelectronics’SuperMESH™technology,combinedwithanewoptimizedverticalstructure.Thesedevicesboastanextremelylowonresistance,superiordynamicperformanceandhighavalanchecapability,render

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STU5N95K3

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=4.0A@TC=25℃ ·DrainSourceVoltage-VDSS=950V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STU5N95K5

Ultra-low gate charge

Description TheseveryhighvoltageN-channelPowerMOSFETsaredesignedusingMDmesh™K5technologybasedonaninnovativeproprietaryverticalstructure.Theresultisadramaticreductioninon-resistanceandultra-lowgatechargeforapplicationsrequiringsuperiorpowerdensityandhigheffi

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STU5N95K5

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=3.5A@TC=25℃ ·DrainSourceVoltage-VDSS=950V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.5Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STU5NK50Z

丝印:5NK50Z;Package:IPAK;N-channel 500 V, 1.22 Ω typ., 4.4 A SuperMESH™ Power MOSFETs in I2PAK, DPAK, TO‑220, TO‑220FP and IPAK packages

Features •100avalanchetested •Gatechargeminimized •Verylowintrinsiccapacitance •Zener-protected Applications •Switchingapplications Description Thesehigh-voltagedevicesareZener-protectedN-channelPowerMOSFETs developedusingtheSuperMESH™technologybySTMicroelect

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

STU600S

N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.

SamhopSamHop Microelectronics Corp.

三合微科三合微科股份有限公司

STU6010

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STU6011

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STU6012

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

STU6013

SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

VBR:6.8-440Volts PPK:600Watts FEATURES: *600Wsurgecapabilityat1ms *Excellentclampingcapability *Lowzenerimpedance *Fastresponsetime:typicallylessthen1.0psfrom0volttoVBR(min.) *TypicalIRlessthen1mAabove10V *Pb/RoHSFree

EIC

EIC discrete Semiconductors

技术参数

  • Package:

    IPAK

  • Grade:

    Industrial

  • VDSS(V):

    600

  • RDS(on)_max(@ VGS=10V)(Ω):

    0.6

  • Drain Current (Dc)_max(A):

    7.5

  • PTOT_max(W):

    85

  • Qg_typ(nC):

    13.5

供应商型号品牌批号封装库存备注价格
ST
24+
PLCC
2020
原装现货假一罚十
询价
SAMHOP
25+
TO-252-4
2500
强调现货,随时查询!
询价
ATT
24+
DIP-6
6232
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
ST/进口原
17+
Max220F
6200
询价
SAMHOP
24+
SOPDIP
40933
原装进口现货假一赔百
询价
SAMHOP
23+
TO263
5000
原装正品,假一罚十
询价
STM
24+
QFN
5000
只做原装公司现货
询价
Samhop
13+
66238
原装分销
询价
SAMHOP
2016+
TO-252
4300
只做原装,假一罚十,公司可开17%增值税发票!
询价
SAMHOP
23+
TO-252-
8560
受权代理!全新原装现货特价热卖!
询价
更多STU供应商 更新时间2025-7-30 13:30:00