| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free 文件:28.4 Kbytes 页数:4 Pages | EIC | EIC | ||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free 文件:28.4 Kbytes 页数:4 Pages | EIC | EIC | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=48A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8.4mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:318.28 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
N-channel 30 V, 0.0072 廓, 48 A - DPAK - IPAK STripFET??V Power MOSFET Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM. Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Ver 文件:344.84 Kbytes 页数:15 Pages | STMICROELECTRONICS 意法半导体 | STMICROELECTRONICS | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=80A@ TC=25℃ ·Drain Source Voltage -VDSS=55V(Min) ·Static Drain-Source On-Resistance -RDS(on) =8.5mΩ(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. 文件:317.65 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
Dual Enhancement Mode Field Effect Transistor (N and P Channel) PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 60V 8.6A 90 @ VGS=4.5V 76 @ VGS=10V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -60V -7.3A 145 @ VGS=-4.5V 110 @ VGS=-10V 文件:275.03 Kbytes 页数:11 Pages | SAMHOP 三合微科 | SAMHOP | ||
Super high dense cell design for low RDS(ON). FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package. 文件:123.38 Kbytes 页数:8 Pages | SAMHOP 三合微科 | SAMHOP | ||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free 文件:28.4 Kbytes 页数:4 Pages | EIC | EIC | ||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free 文件:28.4 Kbytes 页数:4 Pages | EIC | EIC | ||
SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR VBR : 6.8 - 440 Volts PPK : 600 Watts FEATURES : * 600W surge capability at 1ms * Excellent clamping capability * Low zener impedance * Fast response time : typically less then 1.0 ps from 0 volt to VBR(min.) * Typical IR less then 1mA above 10V * Pb / RoHS Free 文件:28.4 Kbytes 页数:4 Pages | EIC | EIC |
技术参数
- VRRM(V):
700
- IFSM:
8
- VF(V):
1.5
- VF_IF(A):
1
- IR(uA):
0.2
- IR_VR(V):
650
- Trr(ns):
60
- Tj:
-55℃-150℃
- Package Outline:
SOT-23
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
TO-251 |
3166 |
正品原装--自家现货-实单可谈 |
询价 | |||
ST |
24+ |
PLCC |
2020 |
原装现货假一罚十 |
询价 | ||
ST |
18+ |
QFN-16 |
7432 |
全新原装现货,可出样品,可开增值税发票 |
询价 | ||
ST/意法半导体 |
25 |
TO-251-3 |
6000 |
原装正品 |
询价 | ||
ST |
22+ |
16QFN |
9000 |
原厂渠道,现货配单 |
询价 | ||
ST |
17+ |
QFN16 |
480 |
请放心是现货的,原厂原装正品 |
询价 | ||
JST/日压 |
2508+ |
/ |
320680 |
一级代理,原装现货 |
询价 | ||
Stugia |
25+ |
3 |
公司优势库存 热卖中!! |
询价 | |||
ST/意法 |
23+ |
IPAK |
8215 |
原厂原装 |
询价 | ||
ST/意法半导体 |
24+ |
TO-251-3 |
16960 |
原装正品现货支持实单 |
询价 |
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