Dual E nhancement Mode Field Effect Transistor (N and P Channel)

Dual Enhancement Mode Field Effect Transistor (N and P Channel)

文件：988.18 Kbytes 页数：11 Pages

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Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

文件：120.42 Kbytes 页数：11 Pages

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Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

文件：879.06 Kbytes 页数：11 Pages

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Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

文件：180.74 Kbytes 页数：11 Pages

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Dual N-Channel E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO252-4L package. ● ESD Protected.

文件：639.05 Kbytes 页数：7 Pages

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Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：849.66 Kbytes 页数：11 Pages

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N-channel 25 V, 0.01 廓, 40 A, DPAK, IPAK STripFET??V Power MOSFET

Description This STripFET™ V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class figure of merit (FOM). Features ■ RDS(on) * Qg industry benchmark ■ Extremely low on-resist

文件：231.89 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● Surface Mount Package. ● ESD Protected.

文件：365.45 Kbytes 页数：8 Pages

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Dual Enhancement Mode Field Effect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 40V 15A 32 @ VGS=10V 42 @ VGS=4.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -40V -12A 48 @ VGS=-10V 68 @ VGS=-4.5V

文件：268.31 Kbytes 页数：11 Pages

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N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● TO-252 and TO-251 Package. ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● ESD Protected.

文件：249.46 Kbytes 页数：8 Pages

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