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STU2555NL

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件:868.39 Kbytes 页数:8 Pages

SAMHOP

三合微科

STU25L01

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件:98.3 Kbytes 页数:7 Pages

SAMHOP

三合微科

STU25N03L

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件:784.3 Kbytes 页数:8 Pages

SAMHOP

三合微科

STU2640NL

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件:895.58 Kbytes 页数:8 Pages

SAMHOP

三合微科

STU27N3LH5

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=27A@ TC=25℃ ·Drain Source Voltage -VDSS=30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.02Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:317.12 Kbytes 页数:2 Pages

ISC

无锡固电

STU2LN60K3

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=8A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:317.93 Kbytes 页数:2 Pages

ISC

无锡固电

STU2N105K5

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 1.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 1050V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件:375.6 Kbytes 页数:2 Pages

ISC

无锡固电

STU2N62K3

N-channel 620 V, 3 ohm, 2.2 A SuperMESH3 Power MOSFET

Description These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low on-resistance, superior dynamic performance and high avalanche capability, rende

文件:1.26101 Mbytes 页数:25 Pages

STMICROELECTRONICS

意法半导体

STU2N80K5

丝印:2N80K5;Package:IPAK;N-channel 800 V, 3.5 廓 typ., 2 A Zener-protected SuperMESH??5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages

Description These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high effi

文件:1.63181 Mbytes 页数:23 Pages

STMICROELECTRONICS

意法半导体

STU2N80K5

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.0A@ TC=25℃ ·Drain Source Voltage -VDSS=800V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 4.5Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件:317.41 Kbytes 页数:2 Pages

ISC

无锡固电

技术参数

  • VRRM(V):

    700

  • IFSM:

    8

  • VF(V):

    1.5

  • VF_IF(A):

    1

  • IR(uA):

    0.2

  • IR_VR(V):

    650

  • Trr(ns):

    60

  • Tj:

    -55℃-150℃

  • Package Outline:

    SOT-23

供应商型号品牌批号封装库存备注价格
STM
25+
TO-251
3675
就找我吧!--邀您体验愉快问购元件!
询价
ST
1524+
IPAK
10000
原装正品
询价
ST
TO-251
3166
正品原装--自家现货-实单可谈
询价
24+
20
询价
24+
TO-251
20000
全新原厂原装,进口正品现货,正规渠道可含税!!
询价
ST/意法半导体
25
TO-251-3
6000
原装正品
询价
ST
18+
QFN-16
7432
全新原装现货,可出样品,可开增值税发票
询价
1800
原装现货
询价
ST(意法半导体)
24+
VQFN-24-EP(4x4)
690000
代理渠道/支持实单/只做原装
询价
JST/日压
2508+
/
320680
一级代理,原装现货
询价
更多STU供应商 更新时间2021-9-14 10:50:00