STU14NA50

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

DESCRIPTION TheMax220TMpackageisanewhighvolumepowerpackageexibitingthesamefootprintastheindustrystandardTO-220,butdesignedtoaccomodatemuchlargersiliconchips,normallysuppliedinbiggerpackages.Theincreaseddiecapacitymakesthedeviceidealtoreducecomponentcount

STU150N3LLH6

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=80A@TC=25℃ ·DrainSourceVoltage-VDSS=30V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=3.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

STU1530PL

P-Channel E nhancement Mode MOSFET

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

STU16L01

Super high dense cell design for low RDS(ON).

STU412STO-252Single-N STU420STO-252Single-N STU442STO-252Single-N STU410STO-252Single-N STU456ATO-252Single-N STU456STO-252Single-N STU448STO-252Single-N STU466STO-252Single-N STU446STO-252SingleN STU432LTO-252SingleN STU438ATO-252Single-N STU458STO-252SingleN

STU16N60M2

N-channel 600 V, 0.28 廓 typ., 12 A MDmesh??M2 Power MOSFET in TO-220 and IPAK packages

Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh™M2technology. Thankstotheirstriplayoutandimprovedvertical structure,thesedevicesexhibitlowon-resistance andoptimizedswitchingcharacteristics, renderingthemsuitableforthemostdemanding higheff

STU16N65M2

丝印：16N65M2；Package：IPAK；N-channel 650 V, 0.32 ??typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages

Description ThesedevicesareN-channelPowerMOSFETs developedusingMDmesh™M2technology. Thankstotheirstriplayoutandimprovedvertical structure,thedevicesexhibitlowon-resistance andoptimizedswitchingcharacteristics,rendering themsuitableforthemostdemandinghigh effic

STU16N65M5

N-channel 650 V, 0.230 廓, 12 A MDmesh??V Power MOSFET in TO-220FP, I짼PAK, TO-220, IPAK, TO-247

Description ThesedevicesareN-channelMDmesh™VPowerMOSFETsbasedonaninnovativeproprietaryverticalprocesstechnology,whichiscombinedwithSTMicroelectronics’well-knownPowerMESH™horizontallayoutstructure.Theresultingproducthasextremelylowon-resistance,whichisunmatcheda

STU16NB50

N-CHANNEL 500V - 0.28ohm - 15.6A-Max220 PowerMESH MOSFET

DESCRIPTION UsingthelatesthighvoltageMESHOVERLAY™process,STMicroelectronicshasdesignedanadvancedfamilyofpowerMOSFETswithoutstandingperformances.ThenewpatentpendingstriplayoutcoupledwiththeCompany’sproprietaryedgeterminationstructure,givesthelowestRDS(on)pera

STU16NC50

N-CHANNEL 500V - 0.22ohm - 16A Max220 PowerMesh?줚I MOSFET

DESCRIPTION ThePowerMESH™IIistheevolutionofthefirstgenerationofMESHOVERLAY™.ThelayoutrefinementsintroducedgreatlyimprovetheRon*areafigureofmeritwhilekeepingthedeviceattheleadingedgeforwhatconcernsswithingspeed,gatechargeandruggedness. ■TYPICALRDS(on)=0.

STU1855PL

P-Channel E nhancement Mode Field Effect Transistor

FEATURES ●SuperhighdensecelldesignforlowRDS(ON). ●Ruggedandreliable. ●TO-252andTO-251Package.