N-channel 1000 V, 6.25 廓, 1.85 A, TO-220, DPAK, IPAK Zener-protected SuperMESH??Power MOSFET

Description These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH™ technology by STMicroelectronics, an optimization of the well-established PowerMESH™. In addition to a significant reduction in on-resistance, these devices are designed to ensure a h

文件：459.31 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：196.64 Kbytes 页数：9 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package

文件：826.92 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：825.99 Kbytes 页数：9 Pages

SAMHOP

三合微科

N-Channel Logic Level E nhancement Mode F ield E ffect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：765.38 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：722.92 Kbytes 页数：7 Pages

SAMHOP

三合微科

N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：853.97 Kbytes 页数：8 Pages

SAMHOP

三合微科

N-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● TO-252 and TO-251 Package.

文件：814.74 Kbytes 页数：8 Pages

SAMHOP

三合微科

Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

文件：177.73 Kbytes 页数：11 Pages

SAMHOP

三合微科

Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

文件：201.43 Kbytes 页数：11 Pages

SAMHOP

三合微科