N-Channel E nhancement Mode F ield E ffect Trans is tor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：716.48 Kbytes 页数：7 Pages

Samhop

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：481.7 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：493 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

30V N-Channel Enhancement Mode MOSFET

Description The SX3400BI uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Application Battery protection Load switch

文件：1.65069 Mbytes 页数：5 Pages

SXSEMI

瞬芯半导体

30V N-Channel Enhancement Mode MOSFET

Description The SX3400CI uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =5.2A RDS(ON)

文件：802.85 Kbytes 页数：5 Pages

SXSEMI

瞬芯半导体