Dual E nhancement Mode F ield E ffect Transistor ( N and P Channel)

Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

文件：195.27 Kbytes 页数：11 Pages

SAMHOP

三合微科

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：603.05 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

Mosfets

Samhop

三合微科

1-Line, 36V EOS Protection

Features High ESD withstand Voltage: ±30kV (Contact) & ±30kV (Air) per IEC 61000-4-2 High peak pulse current capability: 24A (tp = 8/20μs), 1kV (tp = 1.2/50μs, RS = 42Ω ) per IEC 61000-4-5 Protects one I/O or power line Working voltage 36V Solid-state technology

文件：801.61 Kbytes 页数：8 Pages

SEMTECH

先之科

1-Line, 36V EOS Protection

Features High ESD withstand Voltage: ±30kV (Contact) & ±30kV (Air) per IEC 61000-4-2 High peak pulse current capability: 24A (tp = 8/20μs), 1kV (tp = 1.2/50μs, RS = 42Ω ) per IEC 61000-4-5 Protects one I/O or power line Working voltage 36V Solid-state technology

文件：801.61 Kbytes 页数：8 Pages

SEMTECH

先之科