Low gate drive power losses

文件：933.92 Kbytes 页数：16 Pages

STMICROELECTRONICS

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P-Channel MOSFET uses advanced trench technology

文件：1.25982 Mbytes 页数：4 Pages

DOINGTER

杜因特

P-channel 60 V, 0.13 Ohm typ., 3 A STripFET F6 Power MOSFET in a SO-8 package

This device is a P-channel Power MOSFET developed using the 6thgeneration of STripFET™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on)in all packages. R\nDS(on)* Qg industry benchmark\nExtremely low on-resistance R\nDS(on)\nHigh avalanche ruggedness\nLow gate drive power losses;

ST

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P-channel 60 V, 0.13 廓 typ., 3 A STripFET??VI DeepGATE??Power MOSFET in a SOT-223 package

文件：1.09949 Mbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体