P-Channel E nhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

文件：619.45 Kbytes 页数：7 Pages

SAMHOP

三合微科

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

文件：760.47 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：602.94 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 20V 2.5A 80 @ VGS=4.5V 110 @ VGS=2.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -20V -2A 130 @ VGS=-4.5V 190 @ VGS=-2.5V

文件：926.05 Kbytes 页数：11 Pages

SAMHOP

三合微科

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：613.64 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

Dual Enhancement Mode Field Effect Transistor (N and P Channel )

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 20V 2.5A 50 @ VGS=4.5V 76 @ VGS=2.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -20V -2A 106 @ VGS=-4.5V 198 @ VGS=-2.5V

文件：125.71 Kbytes 页数：9 Pages

SAMHOP

三合微科

Dual P -Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-26 package.

文件：608.37 Kbytes 页数：7 Pages

SAMHOP

三合微科

Dual P-Channel 20 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch for Portable Applications • Battery Switch for Portable Devices • Computers - Bus Switch - Load Switch

文件：524.93 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS (ON). ● Rugged and reliable. ● TSOP6 package.

文件：615.06 Kbytes 页数：7 Pages

SAMHOP

三合微科

Dual N-Channel Enhancement Mode MOSFET

Features: * Super High Dense Cell Design For Low RDS(ON) RDS(ON)

文件：453.69 Kbytes 页数：6 Pages

WEITRON