Dual E nhancement Mode Field E ffect Transistor (N and P Channel)

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 20V 2.5A 80 @ VGS=4.5V 110 @ VGS=2.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -20V -2A 130 @ VGS=-4.5V 190 @ VGS=-2.5V

文件：926.05 Kbytes 页数：11 Pages

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N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：602.94 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

Mosfets

Samhop

三合微科

N- and P-Channel 20V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC

文件：613.64 Kbytes 页数：10 Pages

VBSEMI

微碧半导体

Dual Enhancement Mode Field Effect Transistor (N and P Channel )

PRODUCT SUMMARY (N-Channel) VDSS ID RDS(ON) (mΩ) Max 20V 2.5A 50 @ VGS=4.5V 76 @ VGS=2.5V PRODUCT SUMMARY (P-Channel) VDSS ID RDS(ON) (mΩ) Max -20V -2A 106 @ VGS=-4.5V 198 @ VGS=-2.5V

文件：125.71 Kbytes 页数：9 Pages

Samhop

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Mosfets

Samhop

三合微科