N-Channel Enhancement Mode Field Effect Transistor

FEATURES ● Super high dense cell design for low RDS(ON). ● Rugged and reliable. ● SOT-23 package.

文件：153.48 Kbytes 页数：7 Pages

Samhop

三合微科

N-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • DC/DC Converter

文件：481.31 Kbytes 页数：9 Pages

VBSEMI

微碧半导体

Mosfets

Samhop

三合微科

Super high dense cell design for low RDS(ON).

STU412S TO-252 Single-N STU420S TO-252 Single-N STU442S TO-252 Single-N STU410S TO-252 Single-N STU456A TO-252 Single-N STU456S TO-252 Single-N STU448S TO-252 Single-N STU466S TO-252 Single-N STU446S TO-252 Single N STU432L TO-252 Single N STU438A TO-252 Single-N STU458S TO-252 Single N

文件：124.74 Kbytes 页数：7 Pages

Samhop

三合微科

TCAN341x 3.3-V CAN FD Transceivers With Standby Mode and ±58 V Bus Standoff

1 Features • 3.3 V Single supply operation – Eliminates the 5 V regulator saving BOM cost and reducing PCB space • Excellent EMC operation in homogeneous and heterogeneous networks • Compatible with the requirements of ISO 11898-2:2016 physical layer standard • Support of classical CAN and

文件：1.84294 Mbytes 页数：42 Pages

TI

德州仪器

TCAN341x 3.3-V CAN FD Transceivers with Standby Mode

1 Features • 3.3 V Single supply operation – Eliminates the 5 V regulator saving BOM cost and reducing PCB space • Compatible with the requirements of ISO 11898-2:2016 physical layer standard • Support of classical CAN and optimized CAN FD performance at 2, 5, and 8 Mbps – Short and symmet

文件：1.81864 Mbytes 页数：42 Pages

TI

德州仪器